Package substrate and method of manufacturing the package substrate, and semiconductor package including the package substrate and method of manufacturing the semiconductor package

ABSTRACT

A package substrate may include first conductive patterns, a first insulation layer and a second insulation layer. The first conductive patterns may be electrically connected with a semiconductor chip. The first insulation layer may be on an upper surface and side surfaces of each of the first conductive patterns. The first insulation layer may include at least one opening under at least one of side surfaces of the semiconductor chip. The second insulation layer may be on a lower surface of each of the first conductive patterns. Thus, a gas generated from the DAF may be readily discharged through the opening. A spreading of a crack, which may be generated at the interface between the side surface of the semiconductor chip and the molding member, toward the conductive patterns of the package substrate may be limited and/or suppressed. Adhesion between the semiconductor chip and the molding member may be reinforced.

CROSS-RELATED APPLICATION

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2019-0131074, filed on Oct. 22, 2019 in the KoreanIntellectual Property Office (KIPO), the contents of which are hereinincorporated by reference in their entirety.

BACKGROUND 1. Field

Example embodiments relate to a package substrate and a method ofmanufacturing the package substrate, and a semiconductor package and amethod of manufacturing the package substrate. More particularly,example embodiments relate to a package substrate used for asemiconductor packaging process and a method of manufacturing thepackage substrate, and a semiconductor package and a method ofmanufacturing the package substrate.

2. Description of Related Art

Generally, a semiconductor package may include a package substrate, asemiconductor chip, a conductive wire and a molding member. Thesemiconductor chip may be attached to an upper surface of the packagesubstrate using a die attach film (DAF). The conductive wire may beconnected between the semiconductor chip and the package substrate. Themolding member may be formed on the upper surface of the packagesubstrate to cover the semiconductor chip and the conductive wire. Thepackage substrate may include a conductive pattern and insulation layerarranged on an upper surface and a lower surface of the conductivepattern.

According to related arts, during a process for attaching thesemiconductor chip to the package substrate using the DAF and/or aprocess for forming the molding member, a gas including a volatilematerial may be discharged from the DAF. The gas may form a void at aportion of the molding member adjacent to a side surface of thesemiconductor chip to weaken an adhesion force between the semiconductorchip and the molding member.

Further, in order to test reliability of the semiconductor package, thesemiconductor package may be exposed to high and low temperatures andhigh humidity. Stresses generated in the test may be concentrated on aninterface between the side surface of the semiconductor chip and themolding member to generate a delamination and/or a crack at theinterface. Particularly, the void in the interface between thesemiconductor chip and the molding member may function as to acceleratethe delamination and/or the crack. The crack may spread into the packagesubstrate to damage the package substrate.

SUMMARY

Example embodiments provide a package substrate that may be capable ofreinforcing an adhesion force of an interface between a semiconductorchip and a molding member, suppressing a crack spread generated at theinterface, and limiting and/or preventing a generation of a void at theinterface.

Example embodiments also provide a method of manufacturing theabove-mentioned package substrate.

Example embodiments also provide a semiconductor package including theabove-mentioned package substrate.

Example embodiments also provide a method of manufacturing theabove-mentioned semiconductor package.

According to example embodiments, there may be provided a packagesubstrate. The package substrate may include first conductive patterns,a first insulation layer, and a second insulation layer. The firstconductive patterns may be electrically connected with a semiconductorchip. The first insulation layer may be on an upper surface and sidesurfaces of each of the first conductive patterns. The first insulationlayer may include an opening under at least one of side surfaces of thesemiconductor chip. The second insulation layer may be on a lowersurface of each of the first conductive patterns.

According to example embodiments, there may be provided a packagesubstrate. The package substrate may include a core insulation layer,first conductive patterns, a first insulation layer, a reinforcementpattern, second conductive patterns, and a second insulation layer. Thefirst conductive patterns may be on an upper surface of the coreinsulation layer. The first conductive patterns may be electricallyconnected with a semiconductor chip. The first insulation layer may beon an upper surface and side surfaces of each of the first conductivepatterns. The first insulation layer may include an opening under atleast one of side surfaces of the semiconductor chip to expose at leastone of the first conductive patterns. The reinforcement pattern may beon the first conductive pattern exposed through the opening. The secondconductive patterns may be on a lower surface of the core insulationlayer. The second conductive patterns may be electrically connected withthe first conductive patterns. The second insulation layer may be on alower surface of each of the second conductive patterns.

According to example embodiments, there may be provided a packagesubstrate. The package substrate may include a core insulation layer,first conductive patterns, a first insulation layer, reinforcementpatterns, second conductive patterns, and a second insulation layer. Thefirst conductive patterns may be on an upper surface of the coreinsulation layer. The first conductive patterns may be electricallyconnected with a semiconductor chip. The first insulation layer may beon an upper surface and side surfaces of each of the first conductivepatterns. The first insulation layer may include an opening under atleast one of side surfaces of the semiconductor chip to expose the uppersurface and the side surfaces of each of the first conductive patterns.The reinforcement patterns may be spaced apart from a lower surface ofthe semiconductor chip to form a vertical gap. The reinforcementpatterns may be spaced apart from each other along a horizontaldirection to form a horizontal gap. The second conductive patterns maybe on a lower surface of the core insulation layer. The secondconductive patterns may be electrically connected with the firstconductive patterns. The second insulation layer may be on a lowersurface of each of the second conductive patterns.

According to example embodiments, there may be provided a method ofmanufacturing a package substrate. In the method of manufacturing thepackage substrate, a first insulation layer may be formed on an uppersurface and side surfaces of each of first conductive patterns connectedwith a semiconductor chip. An opening may be formed at a portion of thefirst insulation layer positioned under at least one of side surfaces ofthe semiconductor chip. A second insulation layer may be formed on alower surface of each of the first conductive patterns.

According to example embodiments, there may be provided a semiconductorpackage. The semiconductor package may include a semiconductor chip, apackage substrate and a molding member. The package substrate mayinclude first conductive patterns, a first insulation layer, and asecond insulation layer. The first conductive patterns may beelectrically connected with the semiconductor chip. The first insulationlayer may be on an upper surface and a side surface of each of the firstconductive patterns. The first insulation layer may include an openingpositioned under at least one of side surfaces of the semiconductorchip. The second insulation layer may be arranged on a lower surface ofthe first conductive patterns. The molding member may be on an uppersurface of the package substrate to cover the side surfaces and an uppersurface of the semiconductor chip. The molding member may include aburying portion configured to bury the opening.

According to example embodiments, there may be provided a semiconductorpackage. The semiconductor package may include a semiconductor chip, apackage substrate, and a molding member. The package substrate mayinclude a core insulation layer, first conductive patterns, a firstinsulation layer, a reinforcement pattern, second conductive patterns,and a second insulation layer. The core insulation layer may be underthe semiconductor chip. The first conductive patterns may be on an uppersurface of the core insulation layer. The first conductive patterns maybe electrically connected with a semiconductor chip. The firstinsulation layer may be on an upper surface and side surfaces of each ofthe first conductive patterns. The first insulation layer may include anopening under at least one of side surfaces of the semiconductor chip toexpose any one of the first conductive patterns. The reinforcementpattern may be on the first conductive pattern exposed through theopening. The second conductive patterns may be on a lower surface of thecore insulation layer. The second conductive patterns may beelectrically connected with the first conductive patterns. The secondinsulation layer may be on a lower surface of each of the secondconductive patterns. The molding member may be on an upper surface ofthe package substrate to cover the side surfaces and an upper surface ofthe semiconductor chip. The molding member may include a burying portionconfigured to bury the opening.

According to example embodiments, there may be provided a semiconductorpackage. The semiconductor package may include a semiconductor chip, apackage substrate, a conductive wire and a molding member. The packagesubstrate may include a core insulation layer, first conductivepatterns, a first insulation layer, reinforcement patterns, secondconductive patterns and a second insulation layer. The first conductivepatterns may be on an upper surface of the core insulation layer. Thefirst conductive patterns may be electrically connected with asemiconductor chip. The first insulation layer may be on an uppersurface and side surfaces of each of the first conductive patterns. Thefirst insulation layer may include an opening under at least one of sidesurfaces of the semiconductor chip to expose the upper surface and theside surfaces of each of the first conductive patterns. Thereinforcement patterns may be spaced apart from a lower surface of thesemiconductor chip to form a vertical gap. The reinforcement patternsmay be spaced apart from each other in a horizontal direction to form ahorizontal gap. The second conductive patterns may be on a lower surfaceof the core insulation layer. The second conductive patterns may beelectrically connected with the first conductive patterns. The secondinsulation layer may be on a lower surface of each of the secondconductive patterns. The conductive wire may be electrically connectedbetween the semiconductor chip and the package substrate. The moldingmember may be on an upper surface of the package substrate to cover theside surfaces and an upper surface of the semiconductor chip and theconductive wire. The molding member may include a burying portionconfigured to bury the opening.

According to example embodiments, there may be provided a semiconductorpackage. The semiconductor package may include a semiconductor chip, apackage substrate, a conductive wire, and a molding member. The packagesubstrate may include a core insulation layer under the semiconductorchip, first conductive patterns on an upper surface of the coreinsulation layer and electrically connected with a semiconductor chip, afirst insulation layer on an upper surface and a side surface of each ofthe first conductive patterns, reinforcement patterns, second conductivepatterns, and a second insulation layer. The first insulation layer mayinclude an opening under at least one of side surfaces of thesemiconductor chip to expose an upper surface and a side surface of eachof the first conductive patterns. The reinforcement patterns may be onthe upper surface of each of the first conductive patterns exposedthrough the opening. The reinforcement patterns may be spaced apart froma lower surface of the semiconductor chip to form a vertical gap, andthe reinforcement patterns may be spaced apart from each other along ahorizontal direction to form a horizontal gap. The second conductivepatterns may be on a lower surface of the core insulation layer andelectrically connected with the first conductive patterns. The secondinsulation layer may be on lower surfaces of the second conductivepatterns. The conductive wire may be configured to electrically connectthe semiconductor chip with the package substrate. The molding membermay be on an upper surface of the package substrate to cover an uppersurface and the side surfaces of the semiconductor chip. The moldingmember may include a burying portion configured to bury the opening, avertical interlocking portion inserted into the vertical gap, and ahorizontal interlocking portion inserted into the horizontal gap.

According to example embodiments, there may be provided a method ofmanufacturing a semiconductor package. In the method of manufacturingthe semiconductor package, a semiconductor chip may be on a packagesubstrate. The package substrate may include first conductive patterns,a first insulation layer and a second insulation layer. The firstconductive patterns may be electrically connected with the semiconductorchip. The first insulation layer may be on an upper surface and sidesurfaces of each of the first conductive patterns. The first insulationlayer may include an opening positioned under at least one of sidesurfaces of the semiconductor chip. The second insulation layer may beon lower surfaces of the first conductive patterns. The semiconductorchip may be electrically connected with the first conductive patterns. Amolding member may be on an upper surface of the package substrate andthe side surfaces and an upper surface of the semiconductor chip. Themolding member may include a burying portion configured to bury theopening.

According to example embodiments, the opening may be formed at theportion of the first insulation layer under the interface between theside surface of the semiconductor chip and the molding member. Thus,during a process for attaching the semiconductor chip with the packagesubstrate using a die attach film (DAF) and/or a process for forming themolding member, a gas generated from the DAF may be readily dischargedthrough the opening. As a result, a void may not be generated in theinterface between the semiconductor chip and the molding member.

Further, the opening may be filled with the molding member. Because themolding member may have stiffness stronger than that of the firstinsulation layer, a spreading of a crack, which may be generated at theinterface between the side surface of the semiconductor chip and themolding member, toward the conductive patterns of the package substratemay be suppressed. Furthermore, the reinforcement pattern on theconductive pattern of the package substrate exposed through the openingmay suppress the spreading of the crack toward the package substrate.Thus, damages to the conductive patterns of the package substrate by thecrack may be limited and/or prevented.

Particularly, the conductive pattern and the reinforcement pattern mayform the horizontal gap and the vertical gap filled with the moldingmember by the opening. Therefore, the conductive pattern and thereinforcement pattern may form an interlock structure having anunevenness shape together with the molding member in the horizontal gapand the vertical gap to reinforce an adhesion force between thesemiconductor chip and the molding member.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1 to 31 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments;

FIG. 2 is a plan view illustrating the package substrate in FIG. 1;

FIG. 3 is an enlarged plan view illustrating a portion “A” in FIG. 2;

FIG. 4 is a cross-sectional view taken along a line B-B′ in FIG. 3;

FIGS. 5 and 6 are cross-sectional views illustrating a method ofmanufacturing the package substrate in FIG. 1;

FIG. 7 is a plan view illustrating a package substrate in accordancewith example embodiments;

FIG. 8 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments;

FIG. 9 is a plan view illustrating the package substrate in FIG. 8;

FIG. 10 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments;

FIG. 11 is a plan view illustrating the package substrate in FIG. 10;

FIG. 12 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments;

FIG. 13 is a plan view illustrating the package substrate in FIG. 12;

FIG. 14 is an enlarged plan view illustrating a portion “C” in FIG. 13;

FIG. 15 is a cross-sectional view taken along a line D-D′ in FIG. 14;

FIG. 16 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments;

FIG. 17 is a cross-sectional view taken along a line E-E′ in FIG. 16;

FIG. 18 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 1 in accordance with exampleembodiments;

FIG. 19 is an enlarged cross-sectional view illustrating a portion “F”in FIG. 18;

FIG. 20 is a cross-sectional view taken along a line G-G′ in FIG. 19;

FIGS. 21 to 23 are cross-sectional views illustrating a method ofmanufacturing the semiconductor package in FIG. 18;

FIG. 24 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments;

FIG. 25 is an enlarged cross-sectional view illustrating a portion “H”in FIG. 24;

FIG. 26 is a cross-sectional view taken along a line I-I′ in FIG. 25;

FIG. 27 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 16 in accordance with exampleembodiments;

FIG. 28 is an enlarged cross-sectional view illustrating a portion “J”in FIG. 27;

FIG. 29 is a cross-sectional view taken along a line K-K′ in FIG. 28;

FIG. 30 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments; and

FIG. 31 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments.

DETAILED DESCRIPTION

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

Hereinafter, example embodiments will be explained in detail withreference to the accompanying drawings.

Package Substrate

FIG. 1 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments, FIG. 2 is a plan view illustratingthe package substrate in FIG. 1, FIG. 3 is an enlarged plan viewillustrating a portion “A” in FIG. 2, and FIG. 4 is a cross-sectionalview taken along a line B-B′ in FIG. 3.

Referring to FIGS. 1 to 4, a package substrate 100 of this exampleembodiment ma include a core insulation layer 110, first conductivepatterns 120, second conductive patterns 130, a first insulation layer140 and a second insulation layer 150.

The first conductive patterns 120 may be arranged on an upper surface ofthe core insulation layer 110. The first conductive patterns 120 may beextended on the upper surface of the core insulation layer 110 along ahorizontal direction. The first conductive patterns 120 may be arrangedspaced apart from each other along the horizontal direction. Horizontaldistances between the first conductive patterns 120 may be substantiallyequal or different from each other. The first conductive patterns 120may include a metal such as copper, aluminum, etc.

The second conductive patterns 130 may be arranged on a lower surface ofthe core insulation layer 110. The second conductive patterns 130 may beextended on the lower surface of the core insulation layer 110 along thehorizontal direction. The second conductive patterns 130 may be arrangedspaced apart from each other along the horizontal direction. Horizontaldistances between the second conductive patterns 130 may besubstantially equal or different from each other. The second conductivepatterns 130 may include a metal such as copper, aluminum, etc. Thesecond conductive patterns 130 may be electrically connected with thefirst conductive patterns 120 via contacts 112 vertically formed throughthe core insulation layer 110.

The first insulation layer 140 may be formed on the upper surface of thecore insulation layer 110 to cover the first conductive patterns 120.Particularly, the first insulation layer 140 may be configured to coveran upper surface and side surfaces of each of the first conductivepatterns 120. The side surfaces of each of the first conductive patterns120 may be substantially parallel to the horizontal direction. That is,the first insulation layer 140 may be formed between the side surfacesof the first conductive patterns 120. The first insulation layer 140 mayinclude a solder resist.

A semiconductor chip may be arranged on an upper surface of the firstinsulation layer 140. A lower surface of the semiconductor chip may beattached to the upper surface of the first insulation layer 140 using adie attach film (DAF). The semiconductor chip may be positioned at acentral portion of the upper surface of the first insulation layer 140.

The first insulation layer 140 may include a plurality of pad openings142. The pad openings 142 may be formed through an edge portion of thefirst insulation layer 140 outside a side surface Z of the semiconductorchip to expose the first conductive patterns 120. Pads of thesemiconductor chip may be electrically connected with the firstconductive patterns exposed through the pad openings 142. Alternatively,the pad openings 142 may be formed through an edge portion of the firstinsulation layer 140 under the lower surface of the semiconductor chipto expose the first conductive patterns 120. The pads of thesemiconductor chip may be electrically connected with the firstconductive patterns 120 exposed through the pad openings 142.

The first insulation layer 140 may include at least one opening 144. Theopening 144 may be formed through a portion of the first insulationlayer 140 under the side surface of the semiconductor chip. The opening144 may function as a discharge passage of a gas generated in a processfor attaching the semiconductor chip to the package substrate 100 and/ora process for a molding member illustrated later. Further, the opening144 may be filled with the molding member to have functions forreinforcing an adhesion force at an interface between the semiconductorchip and the molding member and for suppressing a spreading of a crackgenerated at the interface between the semiconductor chip and themolding member. Thus, the side surface Z of the semiconductor chip maycorrespond to the interface of the semiconductor chip and the moldingmember.

In example embodiments, the opening 144 may be arranged along all of theside surfaces Z of the semiconductor chip. Alternatively, the opening144 may be positioned under one side surface, two side surfaces or threeside surfaces among total side surfaces Z of the semiconductor chip. Theopening 144 may have a rectangular shape. Alternatively, the opening 144may have other shapes such as a triangular shape, a circular shape, etc.

Each of openings 144 may be extended in the horizontal direction. Thus,each of the openings 144 may include an inner opening 146 positionedinside the side surface Z of the semiconductor chip, and an outeropening 148 extended from the inner opening 146 and positioned outsidethe side surface Z of the semiconductor chip. The inner opening 146 mayhave a length substantially the same as that of the outer opening 148.Alternatively, the length of the inner opening 146 may be different fromthe length of the outer opening 148. For example, the length of theinner opening 146 may be shorter or longer than the length of the outeropening 148.

Each of the openings 144 may be configured to expose at least one of thefirst conductive patterns 120. That is, a portion of the firstconductive pattern 120 under the side surface of the semiconductor chipmay be exposed through the opening 144. Further, portions of the uppersurface of the core insulation layer 110 under the side surface Z of thesemiconductor chip may also be exposed through the opening 144. Becausethe upper surface of the first conductive pattern 120 may be lower thanthe upper surface of the first insulation layer 140, a vertical gap VGmay be formed between the upper surface of the first conductive pattern120 and the lower surface of the semiconductor chip, i.e., a lowersurface of the DAF. Further, Horizontal gaps HG may be formed betweenthe side surfaces of the first conductive patterns 120, and between theside surface of the first conductive pattern 120 and an inner surface ofthe opening 144.

In example embodiments, the three first conductive patterns 120 may beexposed through one opening 144. Particularly, the upper surface and theside surfaces of each of the three first conductive patterns 120 may beexposed through the opening 144. Thus, the first conductive patterns 120exposed through the opening 144 may form a lower unevenness structure.Alternatively, the opening 144 may be configured to expose only theupper surface of the core insulation layer 110, not expose the firstconductive pattern 120. In this case, the opening 144 may be formed at aportion of the first insulation layer 140 under which the firstconductive pattern 120 may not be arranged.

The second insulation layer 150 may be arranged on the lower surface ofthe core insulation layer 110 to cover the second conductive patterns130. The second insulation layer 150 may include openings 152 configuredto expose the second conductive patterns 130. External terminals such assolder balls may be mounted on the second conductive patterns 130exposed through the openings 152.

In example embodiments, the package substrate 100 may include thetwo-layered conductive patterns 120 and 130. Alternatively, the packagesubstrate 100 may include one-layered conductive patterns or at leastthree-layered conductive patterns.

FIGS. 5 and 6 are cross-sectional views illustrating a method ofmanufacturing the package substrate in FIG. 1.

Referring to FIG. 5, the first conductive patterns 120 may be formed onthe upper surface of the core insulation layer 110. The secondconductive patterns 130 may be formed on the lower surface of the coreinsulation layer 110. The first and second conductive patterns 120 and130 may be formed by forming conductive layers on the upper and lowersurfaces of the core insulation layer 110, respectively, and bypatterning the conductive layers. The first and second conductivepatterns 120 and 130 may be electrically connected with each other viathe contacts 112 formed through the core insulation layer 110.

Referring to FIG. 6, the first insulation layer 140 may be formed on thefirst conductive patterns 120. The second insulation layer 150 may beformed on the second conductive patterns 130.

The first insulation layer 140 may be partially removed by an etchingprocess to form the pad openings 142 and the openings 144 configured toexpose the first conductive patterns 120. As mentioned above, theopenings 144 may be positioned under the side surface Z of thesemiconductor chip. The second insulation layer 150 may be partiallyremoved to form the openings 152 configured to expose the secondconductive patterns 130, thereby completing the package substrate 100 inFIG. 1.

FIG. 7 is a plan view illustrating a package substrate in accordancewith example embodiments.

A package substrate 100 a of this example embodiment may includeelements substantially the same as those of the package substrate 100 inFIG. 1 except for an opening. Thus, the same reference numerals mayrefer to the same elements and any further illustrations with respect tothe same elements may be omitted herein for brevity.

Referring to FIG. 7, an opening 144 a of a first insulation layer 140 ain accordance with this example embodiment may be a single openingextended along all of the side surfaces Z of the semiconductor chip.That is, the opening 144 a may have a rectangular frame shame positionedunder the four side surfaces Z of the semiconductor chip.

FIG. 8 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments, and FIG. 9 is a plan viewillustrating the package substrate in FIG. 8.

A package substrate 100 b of this example embodiment may includeelements substantially the same as those of the package substrate 100 inFIG. 1 except for an opening. Thus, the same reference numerals mayrefer to the same elements and any further illustrations with respect tothe same elements may be omitted herein for brevity.

Referring to FIGS. 8 and 9, a first insulation layer 240 of this exampleembodiment may include a pad opening 242 and an opening 244. The padopening 242 may be substantially the same as the pad opening 142 inFIGS. 1 and 2. Thus, any further illustrations with respect to the padopening 242 may be omitted herein for brevity.

The opening 244 may be positioned only inside the side surface Z of thesemiconductor chip. That is, the opening 244 may correspond to the inneropening 146 in FIG. 2.

FIG. 10 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments, and FIG. 11 is a plan viewillustrating the package substrate in FIG. 10.

A package substrate 100 c of this example embodiment may includeelements substantially the same as those of the package substrate 100 inFIG. 1 except for an opening. Thus, the same reference numerals mayrefer to the same elements and any further illustrations with respect tothe same elements may be omitted herein for brevity.

Referring to FIGS. 10 and 1, a first insulation layer 340 of thisexample embodiment may include a pad opening 342 and an opening 344. Thepad opening 342 may be substantially the same as the pad opening 142 inFIGS. 1 and 2. Thus, any further illustrations with respect to the padopening 342 may be omitted herein for brevity.

The opening 344 may be positioned only outside the side surface Z of thesemiconductor chip. That is, the opening 344 may correspond to the outeropening 148 in FIG. 2.

FIG. 12 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments, FIG. 13 is a plan view illustratingthe package substrate in FIG. 12, FIG. 14 is an enlarged plan viewillustrating a portion “C” in FIG. 13, and FIG. 15 is a cross-sectionalview taken along a line D-D′ in FIG. 14.

A package substrate 100 d of this example embodiment may includeelements substantially the same as those of the package substrate 100 inFIG. 1 except for further including reinforcement patterns. Thus, thesame reference numerals may refer to the same elements and any furtherillustrations with respect to the same elements may be omitted hereinfor brevity.

Referring to FIGS. 12 to 14, each of reinforcement patterns 150′ may bearranged on the upper surface of each of the first conductive patterns120 exposed through the opening 144. The reinforcement pattern 150′ maybe formed by a plating process. The reinforcement pattern 150′ mayfunction as to suppress a spreading of a crack, which may be generatedat the interface between the semiconductor chip and the molding member,to the first conductive pattern 120.

Because the upper surface and the side surfaces of the first conductivepattern 120 may be exposed through the opening 144, an upper surface andside surfaces of the reinforcement pattern 150′ may also be exposedthrough the opening 144. Thus, structures including the first conductivepattern 120 and the reinforcement pattern 150′ may form a lowerunevenness structure in the opening 144.

In example embodiments, the reinforcement pattern 150′ may have athickness less than that of the first insulation layer 140. Thus, avertical gap VG1 may be formed between the upper surface of thereinforcement pattern 150′ and the lower surface of the semiconductorchip, particularly, the lower surface of the DAF. The vertical gap VG1may have a vertical length shorter than a vertical length of thevertical gap VG in FIG. 4. Further, the reinforcement pattern 150′ mayhave a width substantially the same as that of the first conductivepattern 120. Thus, horizontal gaps HG1 may be formed between the sidesurface of the first conductive pattern 120 and the side surface of thereinforcement pattern 150′, and between the side surfaces of the firstconductive pattern 120 and the reinforcement pattern 150′ and the innersurface of the opening 144. The horizontal gap VG1 may have a horizontallength substantially the same as that of the horizontal gap VG in FIG.4.

In example embodiments, the reinforcement pattern 150′ may include afirst pattern 152′ and a second pattern 154′. The first pattern 152′ maybe arranged on the upper surface of the first conductive pattern 120.The second pattern 154′ may be arranged on an upper surface of the firstpattern 152′. The second pattern 154′ may have an upper surfaceconfigured to form the vertical gap VG1 together with the lower surfaceof the semiconductor chip.

The first pattern 152′ may function as to a barrier for suppressing ametal in the first conductive pattern from upwardly diffusing. The firstpattern 152′ may include nickel. The second pattern 154′ may function asto reinforce an adhesion force between the reinforcement pattern 150′and the molding member. The second pattern 154′ may include gold.Alternatively, the reinforcement pattern 150′ may include a single layeror at least three-layered structure.

A method of manufacturing the package substrate 100 d may includeprocesses substantially the same as those illustrated with reference toFIGS. 5 and 6 except for further including the plating process forforming the reinforcement pattern 150′. Thus, any further illustrationswith respect to the method of forming the package substrate 100 d may beomitted herein for brevity.

FIG. 16 is a cross-sectional view illustrating a package substrate inaccordance with example embodiments, and FIG. 17 is a cross-sectionalview taken along a line E-E′ in FIG. 16.

A package substrate 100 e of this example embodiment may includeelements substantially the same as those of the package substrate 100 din FIG. 12 except for a reinforcement pattern. Thus, the same referencenumerals may refer to the same elements and any further illustrationswith respect to the same elements may be omitted herein for brevity.

Referring to FIGS. 16 and 17, a reinforcement pattern 160 of thisexample embodiment may have a thickness substantially the same as thatof the first insulation layer 140. Thus, the vertical gap VG1 may not beformed between an upper surface of the reinforcement pattern 160 and thelower surface of the semiconductor chip. However, horizontal gaps HG2substantially the same as the horizontal gaps HG1 in FIG. 15 may beformed between the side surface of the first conductive pattern 120 anda side surface of the reinforcement pattern 160, and between the sidesurfaces of the first conductive pattern 120 and the reinforcementpattern 160 and the inner surface of the opening 144.

In example embodiments, the reinforcement pattern 160 may include afirst pattern 162 and a second pattern 164. The first pattern 162 may bearranged on the upper surface of the first conductive pattern 120. Thesecond pattern 164 may be arranged on an upper surface of the firstpattern 162. The second pattern 164 may have an upper surface configuredto make contact with the lower surface of the semiconductor chip,particularly, the lower surface of the DAF.

The first pattern 162 may have a function substantially the same as thatof the first pattern 152′ in FIG. 12. The second pattern 164 may have afunction substantially the same as that of the second pattern 154′ inFIG. 12. Thus, any further illustrations with respect to the functionsof the first and second patterns 162 and 164 may be omitted herein forbrevity. Alternatively, the reinforcement pattern 160 may include asingle layer or at least three-layered structure.

Semiconductor Package

FIG. 18 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 1 in accordance with exampleembodiments, FIG. 19 is an enlarged cross-sectional view illustrating aportion “F” in FIG. 18, and FIG. 20 is a cross-sectional view takenalong a line G-G′ in FIG. 19.

Referring to FIGS. 18 to 20, a semiconductor package 400 of this exampleembodiment may include a package substrate 100, a semiconductor chip410, a DAF 420, a conductive wire 430, a molding member 440 and externalterminals 450.

The semiconductor package 400 of this example embodiment may include thepackage substrate 100 in FIG. 1. Thus, any further illustrations withrespect to the package substrate 100 may be omitted herein for brevity.Alternatively, the semiconductor package 400 may include the packagesubstrate 100 a in FIG. 7, the package substrate 100 b in FIG. 8 or thepackage substrate 100 c in FIG. 10.

The semiconductor chip 410 may be arranged on a central portion of theupper surface of the package substrate 100. The semiconductor chip 410may be attached to the upper surface of the package substrate 100 usingthe DAF 420. Pads 412 may be arranged on an upper surface of thesemiconductor chip 410. As mentioned above, the openings 144 formedthrough the first insulation layer 140 of the package substrate 100 maybe positioned under the side surface Z of the semiconductor chip 410.Thus, a gas, which may be generated in attaching the semiconductor chip410 to the upper surface of the package substrate 100 using the DAF 420,may be effectively discharged through the opening 144. Therefore, a voidcaused by the remaining gas may not be generated between the DAF 420 andthe package substrate 100.

The conductive wire 430 may be electrically connected between thesemiconductor chip 410 and the package substrate 100. Particularly, theconductive wire 430 may be extended from the pad 412 of thesemiconductor chip 410. The conductive wire 430 may be connected to thefirst conductive pattern 120 exposed through the pad opening 142.

The molding member 440 may be formed on the upper surface of the packagesubstrate 100 to cover the semiconductor chip 410 and the conductivewire 430. Particularly, the opening 144 may be filled with the moldingmember 440. Thus, the molding member 440 may include a burying portion442 configured to bury the opening 144. The molding member 440 mayinclude an epoxy molding compound (EMC) having stiffness stronger thanthat of the solder resist of the first insulation layer 140. Thus, theburying portion 442 may function as to reinforce the adhesion force ofthe interface between the semiconductor chip 410 and the molding member440. Further, the burying portion 442 may function as to suppress thespreading of the crack generated in the interface between thesemiconductor chip 410 and the molding member 440 so that the crack maynot spread into the first conductive pattern 120 of the packagesubstrate 100.

The burying portion 442 may include an inner burying portion 444configured to bury the inner opening 146, and an outer burying portion445 configured to bury the outer opening 148. Particularly, the moldingmember 440 may include a vertical interlocking portion 446 inserted intothe vertical gap VG formed between the upper surface of the firstconductive pattern 120 exposed through the opening 144 and the lowersurface of the semiconductor chip 410, particularly, the lower surfaceof the DAF 420. Further, the molding member 440 may include a horizontalinterlocking portion 448 inserted into the horizontal gaps HG formedbetween the side surfaces of the first conductive patterns 120, andbetween the side surface of the first conductive pattern 120 and theinner surface of the opening 144. That is, the burying portion 442 mayinclude the vertical interlocking portion 446 and the horizontalinterlocking portion 448.

The vertical interlocking portion 446 and the horizontal interlockingportion 448 may provide the molding member 440 with an upper unevennessstructure. Thus, the upper unevenness structure of the molding member440 formed by the vertical interlocking portion 446 and the horizontalinterlocking portion 448 may be combined with the lower unevennessstructure formed by the first conductive patterns 120 to reinforce theadhesion force between the semiconductor chip 410 and the molding member440.

The external terminals 450 may be mounted on the second conductivepatterns 130 exposed through the openings 152 of the second insulationlayer 150. The external terminals 450 may include solder balls.

FIGS. 21 to 23 are cross-sectional views illustrating a method ofmanufacturing the semiconductor package in FIG. 18.

Referring to FIG. 21, the semiconductor chip 410 may be attached to theupper surface of the package substrate 100 using the DAF 420. The sidesurface Z of the semiconductor chip 410 may be positioned over theopening 144 of the package substrate 100.

Referring to FIG. 22, the pads 412 of the semiconductor chip 410 may beelectrically connected to the first conductive patterns 120 exposedthrough the pad openings 142 using the conductive wire 430.

Referring to FIG. 23, the molding member 440 may be formed on the uppersurface of the package substrate 100 to cover the semiconductor chip 410and the conductive wire 430 with the molding member 440. The buryingportion 442 of the molding member 440 may bury the opening 144 of thepackage substrate 100. Further, the vertical interlocking portion 446may be inserted into the vertical gap VG formed between the uppersurface of the first conductive pattern 120 and the lower surface of theDAF 420. The horizontal interlocking portion 448 may be inserted intothe horizontal gaps HF formed between the side surfaces of the firstconductive patterns 120, and between the side surface of the firstconductive pattern 120 and the inner surface of the opening 144.

The external terminals 450 may be mounted on the second conductivepatterns 130 exposed through the openings 152 of the second insulationlayer 150 to complete the semiconductor package 400 in FIG. 18.

FIG. 24 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments, FIG. 25 is an enlarged cross-sectional view illustrating aportion “H” in FIG. 24, and FIG. 26 is a cross-sectional view takenalong a line I-I′ in FIG. 25.

Referring to FIGS. 24 to 26, a semiconductor package 400 a of thisexample embodiment may include a package substrate 100 d, asemiconductor chip 410, a DAF 420, a conductive wire 430, a moldingmember 540 and external terminals 450.

The semiconductor package 400 a of this example embodiment may includethe package substrate 100 d in FIG. 12. Thus, any further illustrationswith respect to the package substrate 100 d may be omitted herein forbrevity. Alternatively, the semiconductor package 400 a may include thepackage substrate 100 a in FIG. 7, the package substrate 100 b in FIG. 8or the package substrate 100 c in FIG. 10.

Further, the semiconductor chip 410, the DAF 420, the conductive wire430 and the external terminals 450 of the semiconductor package 400 amay be substantially the same as the semiconductor chip 410, the DAF420, the conductive wire 430, the molding member 540 and the externalterminals 450 in FIG. 18, respectively. Thus, any further illustrationswith respect to the semiconductor chip 410, the DAF 420, the conductivewire 430 and the external terminals 450 may be omitted herein forbrevity.

The molding member 540 may be formed on the upper surface of the packagesubstrate 100 to cover the semiconductor chip 410 and the conductivewire 430. The molding member 540 may include a burying portion 542configured to bury the opening 144.

The molding member 540 may include a vertical interlocking portion 546inserted into the vertical gap VG1 formed between the reinforcementpattern 150′ on the upper surface of the first conductive pattern 120and the lower surface of the DAF 420. Further, the molding member 540may include a horizontal interlocking portion 548 inserted into thehorizontal gaps HG1 formed between the side surfaces of the firstconductive patterns 120 and the side surfaces of the reinforcementpattern 150′, and between the side surfaces of the first conductivepattern 120 and the reinforcement pattern 150′ and the inner surface ofthe opening 144.

FIG. 27 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 16 in accordance with exampleembodiments, FIG. 28 is an enlarged cross-sectional view illustrating aportion “J” in FIG. 27, FIG. 29 is a cross-sectional view taken along aline K-K′ in FIG. 28.

Referring to FIGS. 27 to 29, a semiconductor package 400 b of thisexample embodiment may include a package substrate 100 e, asemiconductor chip 410, a DAF 420, a conductive wire 430, a moldingmember 640 and external terminals 450.

The semiconductor package 400 b of this example embodiment may includethe package substrate 100 e in FIG. 16. Thus, any further illustrationswith respect to the package substrate 100 e may be omitted herein forbrevity. Alternatively, the semiconductor package 400 a may include thepackage substrate 100 a in FIG. 7, the package substrate 100 b in FIG. 8or the package substrate 100 c in FIG. 10.

As mentioned above, because the reinforcement pattern 160 of the packagesubstrate 100 e may have the thickness substantially the same as thethickness of the first insulation layer 140, the vertical gap VG1 maynot be formed between the upper surface of the reinforcement pattern 160and the lower surface of the semiconductor chip 410. Thus, the moldingmember 640 may include only a horizontal interlocking portion 648inserted into the horizontal gaps HG1 formed between the side surfacesof the first conductive patterns 120 and the side surfaces of thereinforcement pattern 150′, and between the side surfaces of the firstconductive pattern 120 and the reinforcement pattern 150′ and the innersurface of the opening 144.

FIG. 30 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments.

Referring to FIG. 30, a semiconductor package 700 of this exampleembodiment may include a package substrate 100 d, a plurality of firstsemiconductor chips 710, a plurality of second semiconductor chips 760,a control chip 770, a DAF 720, first conductive wires 730, secondconductive wires 732, third conductive wires 734, fourth conductivewires 736, a molding member 740 and external terminals 750.

The semiconductor package 700 of this example embodiment may include thepackage substrate 100 d in FIG. 12. Thus, any further illustrations withrespect to the package substrate 100 d may be omitted herein forbrevity. Alternatively, the semiconductor package 700 may include thepackage substrate 100 in FIG. 1, the package substrate 100 a in FIG. 7,the package substrate 100 b in FIG. 8, the package substrate 100 c inFIG. 10 or the package substrate 100 e in FIG. 16.

The first semiconductor chips 710 may be stacked on the upper surface ofthe package substrate 100 d in a step-like shape. The first conductivewires 730 may be electrically connected between the first semiconductorchips 710 with each other. A lowermost first semiconductor chip 710among the first semiconductor chips 710 may be electrically connectedwith the package substrate 100 d via the first conductive wire 730.

The second semiconductor chips 760 may be stacked on an upper surface ofan uppermost semiconductor chip 710 among the first semiconductor chips710 in a step-like shape. The second conductive wires 732 may beelectrically connected between the second semiconductor chips 760 witheach other. A lowermost second semiconductor chip 760 among the secondsemiconductor chips 760 may be electrically connected with the packagesubstrate 100 d via the second conductive wire 732.

The control chip 770 may be arranged on the upper surface of the packagesubstrate 100 d. The control chip 770 may be electrically connected withthe first conductive pattern 120 of the package substrate 100 d via thefourth conductive wire 736. Thus, the first semiconductor chips 710 maybe electrically connected with the control chip 770. The secondsemiconductor chip 760 may be electrically connected with the controlchip 770 via the third conductive wire 734.

The molding member 740 of this example embodiment may have a structuresubstantially the same as that of the molding member 540 in FIG. 24.Thus, any further illustrations with respect to the molding member 740may be omitted herein for brevity.

FIG. 31 is a cross-sectional view illustrating a semiconductor packageincluding the package substrate in FIG. 12 in accordance with exampleembodiments.

Referring to FIG. 31, a semiconductor package 800 of this exampleembodiment may include a package substrate 100 d, a semiconductor chip810, conductive bumps 830, a molding member 840 and external terminals850.

The package substrate 100 d of the semiconductor package 800 may have astructure similar to that of the package substrate 100 d in FIG. 12. Thepad opening 142 of the package substrate 100 d may be positioned underthe semiconductor chip 810. Thus, any further illustrations with respectto the package substrate 100 d may be omitted herein for brevity.Alternatively, the semiconductor package 800 may include the packagesubstrate 100 in FIG. 1, the package substrate 100 a in FIG. 7, thepackage substrate 100 b in FIG. 8, the package substrate 100 c in FIG.10 or the package substrate 100 e in FIG. 16.

Pads 812 may be arranged on a lower surface of the semiconductor chip810. The conductive bump 830 may be interposed between the semiconductorchip 810 and the package substrate 100 d. The conductive bumps 830 maybe electrically connected between the pads 812 of the semiconductor chip810 and the first conductive patterns 120 of the package substrate 100d.

The molding member 840 may be configured to bury the opening 144 of thefirst insulation layer 140. Particularly, the molding member 840 may beconfigured to fill a space between the semiconductor chip 810 and thepackage substrate 100 d. That is, the spaces between the conductivebumps 830 may be filled with the molding member 840.

According to example embodiments, the opening may be formed at theportion of the first insulation layer under the interface between theside surface of the semiconductor chip and the molding member. Thus,during a process for attaching the semiconductor chip with the packagesubstrate using a die attach film (DAF) and/or a process for forming themolding member, a gas generated from the DAF may be readily dischargedthrough the opening. As a result, a void may not be generated in theinterface between the semiconductor chip and the molding member.

Further, the opening may be filled with the molding member. Because themolding member may have stiffness stronger than that of the firstinsulation layer, a spreading of a crack, which may be generated at theinterface between the side surface of the semiconductor chip and themolding member, toward the conductive patterns of the package substratemay be suppressed. Furthermore, the reinforcement pattern on theconductive pattern of the package substrate exposed through the openingmay suppress the spreading of the crack toward the package substrate.Thus, damages to the conductive patterns of the package substrate by thecrack may be limited and/or prevented.

Particularly, the conductive pattern and the reinforcement pattern mayform the horizontal gap and the vertical gap filled with the moldingmember by the opening. Therefore, the conductive pattern and thereinforcement pattern may form an interlock structure having anunevenness shape together with the molding member in the horizontal gapand the vertical gap to reinforce an adhesion force between thesemiconductor chip and the molding member.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages ofinventive concepts in the present application. Accordingly, all suchmodifications are intended to be included within the scope of inventiveconcepts as defined in the claims. In the claims, means-plus-functionclauses are intended to cover the structures described herein asperforming the recited function and not only structural equivalents butalso equivalent structures. Therefore, it is to be understood that theforegoing is illustrative of various example embodiments and is not tobe construed as limited to the specific example embodiments disclosed,and that modifications to the disclosed example embodiments, as well asother example embodiments, are intended to be included within the scopeof the appended claims.

What is claimed is:
 1. A package substrate comprising: first conductivepatterns electrically connected with a semiconductor chip, thesemiconductor chip including side surfaces, the first conductivepatterns including lower surfaces; a first insulation layer on an uppersurface and a side surface of each of the first conductive patterns, thefirst insulation layer including an opening under at least one of theside surfaces of the semiconductor chip; and a second insulation layeron the lower surfaces of the first conductive patterns.
 2. The packagesubstrate of claim 1, wherein the opening includes: an inner openingpositioned inside the side surface of the semiconductor chip in a planview; and an outer opening extending from the inner opening andpositioned outside the side surface of the semiconductor chip in theplan view.
 3. The package substrate of claim 2, wherein the inneropening has a length substantially the same as a length of the outeropening.
 4. The package substrate of claim 1, wherein the opening ispositioned inside the side surface of the semiconductor chip in a planview.
 5. The package substrate of claim 1, wherein the opening ispositioned outside the side surface of the semiconductor chip in a planview.
 6. The package substrate of claim 1, wherein the opening is one ofa plurality of openings arranged along any one of the side surfaces ofthe semiconductor chip.
 7. The package substrate of claim 6, wherein theplurality of openings are arranged along all of the side surfaces of thesemiconductor chip.
 8. The package substrate of claim 1, wherein theopening is one opening extending along all of the side surfaces of thesemiconductor chip.
 9. The package substrate of claim 1, wherein theopening is configured to expose a corresponding one of the firstconductive patterns.
 10. The package substrate of claim 9, wherein theopening is configured to expose the upper surface and the side surfaceof the first conductive patterns to form a horizontal gap between aninner surface of the opening and the side surface of the firstconductive patterns.
 11. The package substrate of claim 10, furthercomprising: a reinforcement pattern on the corresponding one of thefirst conductive patterns, wherein the opening exposes the reinforcementpatterns.
 12. The package substrate of claim 11, wherein a thickness ofthe reinforcement pattern is thinner than a thickness of the firstinsulation layer such that a vertical gap is between the reinforcementpattern and the semiconductor chip.
 13. The package substrate of claim11, wherein a thickness of the reinforcement pattern is substantiallythe same as a thickness of the first insulation layer.
 14. The packagesubstrate of claim 11, wherein the reinforcement pattern includes: afirst pattern on the first conductive patterns; and a second pattern onan upper surface of the first pattern.
 15. The package substrate ofclaim 14, wherein the first pattern includes nickel, and the secondpattern comprises gold.
 16. The package substrate of claim 1, furthercomprising: a core insulation layer on the lower surfaces of the firstconductive patterns; and second conductive patterns between the coreinsulation layer and the second insulation layer, wherein the secondconductive patterns are electrically connected with the first conductivepatterns.
 17. A semiconductor package comprising: a semiconductor chip,the semiconductor chip including side surfaces; a package substrateincluding first conductive patterns electrically connected with thesemiconductor chip, a first insulation layer on an upper surface and aside surface of each of the first conductive patterns and including anopening positioned under at least one of the side surfaces of thesemiconductor chip, and a second insulation layer, the first conductivepatterns including lower surfaces and the second insulating layer beingon the lower surfaces of the first conductive patterns; and a moldingmember on an upper surface of the package substrate to cover an uppersurface and the side surfaces of the semiconductor chip, the moldingmember including a burying portion configured to bury the opening. 18.The semiconductor package of claim 17, wherein the opening includes aninner opening positioned inside the side surface of the semiconductorchip in a plan view and an outer opening extending from the inneropening and positioned outside the side surface of the semiconductorchip in the plan view; and the burying portion includes an inner buryingportion configured to bury the inner opening and an outer buryingportion configured to bury the outer opening.
 19. The semiconductorpackage of claim 17, wherein the opening is configured to expose acorresponding one of the first conductive patterns, and the packagesubstrate further includes a reinforcement pattern on a portion of thecorresponding one of the first conductive patterns exposed through theopening.
 20. The semiconductor package of claim 19, wherein a verticalgap is between an upper surface of the reinforcement pattern and a lowersurface of the semiconductor chip and the molding member includes avertical interlocking portion inserted into the vertical gap, and ahorizontal gap is between the side surfaces of the reinforcement patternand the side surfaces of the first conductive patterns and the moldingmember includes a horizontal interlocking portion inserted into thehorizontal gap.